Invention Grant
US08891300B2 Nonvolatile memory device, memory system having the same and block managing method, and program and erase methods thereof
有权
非易失性存储器件，具有相同的存储器系统和块管理方法，以及其编程和擦除方法
- Patent Title: Nonvolatile memory device, memory system having the same and block managing method, and program and erase methods thereof
- Patent Title (中): 非易失性存储器件，具有相同的存储器系统和块管理方法，以及其编程和擦除方法
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Application No.: US13746640Application Date: 2013-01-22
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Publication No.: US08891300B2Publication Date: 2014-11-18
- Inventor: Eun Chu Oh , Jaehong Kim , Jongha Kim , Junjin Kong
- Applicant: Eun Chu Oh , Jaehong Kim , Jongha Kim , Junjin Kong
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce
- Priority: KR10-2012-0008370 20120127
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G06F12/02 ; G11C11/56 ; G11C16/10 ; H01L27/115
Abstract:
In one embodiment, the method includes overwriting a memory cell storing m-bit data to store n-bit data, where n is less than or equal to m. The memory cell has one of a first plurality of program states when storing the m-bit data, and the memory cell has one of a second plurality of program states when storing the n-bit data. The second plurality of program states include at least one program state not in the first plurality of program states.
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