Invention Grant
- Patent Title: Semiconductor memory device and method of programming the same
- Patent Title (中): 半导体存储器件及其编程方法
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Application No.: US13306047Application Date: 2011-11-29
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Publication No.: US08891311B2Publication Date: 2014-11-18
- Inventor: Seok Jin Joo
- Applicant: Seok Jin Joo
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0120634 20101130
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; G11C11/56
Abstract:
A program method of a semiconductor memory device includes performing a least significant bit (LSB) program operation for target LSB program cells of a selected page, increasing the threshold voltages of target most significant bit (MSB) program cells of the selected page before performing an MSB operation for the target MSB program cells, and performing the MSB program operation for the target MSB program cells after the increasing of the threshold voltages of the target MSB program cells.
Public/Granted literature
- US20120134214A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME Public/Granted day:2012-05-31
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