Invention Grant
- Patent Title: Semiconductor memory device and operating method thereof
- Patent Title (中): 半导体存储器件及其操作方法
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Application No.: US13606100Application Date: 2012-09-07
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Publication No.: US08891314B2Publication Date: 2014-11-18
- Inventor: Kyoung Jin Park
- Applicant: Kyoung Jin Park
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2012-0029440 20120322
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A semiconductor memory device and the operating method thereof use a low pass voltage to boost a channel of unselected cell strings during a program operation, and boost the channel of the cell string by using the GIDL phenomenon, thereby reducing a disturbance influence on the memory cells connected to the unselected cell strings due to a high pass voltage.
Public/Granted literature
- US20130250697A1 SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF Public/Granted day:2013-09-26
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