Invention Grant
- Patent Title: Optical semiconductor device
- Patent Title (中): 光半导体器件
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Application No.: US13761755Application Date: 2013-02-07
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Publication No.: US08891570B2Publication Date: 2014-11-18
- Inventor: Kouji Nakahara , Yuki Wakayama , Takeshi Kitatani , Kazunori Shinoda
- Applicant: Oclaro Japan, Inc.
- Applicant Address: JP Kanagawa
- Assignee: Oclaro Japan, Inc.
- Current Assignee: Oclaro Japan, Inc.
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, PC
- Priority: JP2012-026749 20120209
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/227 ; H01S5/34 ; H01S5/22 ; H01S5/32 ; H01S5/343 ; H01S5/30 ; H01S5/028 ; H01S5/20 ; H01S5/12

Abstract:
In a BH laser which uses InGaAlAs-MQW in an active layer, Al-based semiconductor multi-layer films including an InP buffer layer and an InGaAlAs-MQW layer, and an InGaAsP etching stop layer are formed in a mesa shape, and a p type InP burial layer is buried in side walls of the mesa shape. An air ridge mesa-stripe of a lateral center that is substantially the same as that of the mesa shape is formed on the mesa shape. According to the present structure, a leakage current can be considerably reduced, the light confinement coefficient can be made to be larger than in a BH laser in the related art, and thereby it is possible to implement a semiconductor laser with a low leakage current and a high relaxation oscillation frequency.
Public/Granted literature
- US20130208751A1 OPTICAL SEMICONDUCTOR DEVICE Public/Granted day:2013-08-15
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