Invention Grant
- Patent Title: Multi-wavelength semiconductor laser device
- Patent Title (中): 多波长半导体激光器件
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Application No.: US14166921Application Date: 2014-01-29
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Publication No.: US08891581B2Publication Date: 2014-11-18
- Inventor: Yuji Okura
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2009-138220 20090609
- Main IPC: H01S3/08
- IPC: H01S3/08 ; H01S5/40 ; H01S5/022
Abstract:
A multi-wavelength semiconductor laser device includes a block having a V-shaped groove with two side faces extending in a predetermined direction; and laser diodes with different light emission wavelengths mounted on the side faces of the groove in the block so that their laser beams are emitted in the predetermined direction.
Public/Granted literature
- US20140146844A1 Multi-Wavelength Semiconductor Laser Device Public/Granted day:2014-05-29
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