Channel surface technique for fabrication of FinFET devices

Invention Grant

US08896072B2 Channel surface technique for fabrication of FinFET devices 有权

Title translation: 用于制造FinFET器件的通道表面技术

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Patent Title: Channel surface technique for fabrication of FinFET devices
Patent Title (中): 用于制造FinFET器件的通道表面技术
Application No.: US13736546

Application Date: 2013-01-08
Publication No.: US08896072B2

Publication Date: 2014-11-25
Inventor: Chung Foong Tan , Eng Huat Toh , Jae Gon Lee , Sanford Chu
Applicant: Chung Foong Tan , Eng Huat Toh , Jae Gon Lee , Sanford Chu
Applicant Address: SG Singapore
Assignee: Globalfoundries Singapore Pte, Ltd.
Current Assignee: Globalfoundries Singapore Pte, Ltd.
Current Assignee Address: SG Singapore
Agent Robert D. McCutcheon
Main IPC: H01L29/78
IPC: H01L29/78 ; H01L29/66

Channel surface technique for fabrication of FinFET devices

Abstract:

A FinFET (p-channel) device is formed having a fin structure with sloped or angled sidewalls (e.g., a pyramidal or trapezoidal shaped cross-section shape). When using conventional semiconductor substrates having a (100) surface orientation, the fin structure is formed in a way (groove etching) which results in sloped or angled sidewalls having a (111) surface orientation. This characteristic substantially increases hole mobility as compared to conventional fin structures having vertical sidewalls.

Abstract(Chinese):

FinFET（p沟道）器件形成为具有倾斜或成角度的侧壁（例如，金字塔形或梯形形状的横截面形状）的翅片结构。当使用具有（100）表面取向的常规半导体衬底时，翅片结构以一种（凹槽蚀刻）形成，其导致具有（111）表面取向的倾斜或倾斜的侧壁。与具有垂直侧壁的常规翅片结构相比，该特性显着增加了空穴迁移率。

Public/Granted literature

US20130187242A1 CHANNEL SURFACE TECHNIQUE FOR FABRICATION OF FinFET DEVICES Public/Granted day:2013-07-25

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的