Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13829639Application Date: 2013-03-14
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Publication No.: US08896114B2Publication Date: 2014-11-25
- Inventor: Hiroshi Notsu , Takahiro Sugimura
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Sartori
- Priority: JP2012-087111 20120406
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/049 ; H01L23/373 ; H01L23/495 ; H01L23/24 ; H01L23/31

Abstract:
A semiconductor device includes a semiconductor chip, a die pad having a chip mount surface for mounting the semiconductor chip, and an electrode terminal for connecting with the semiconductor chip through first and second wirings. The electrode terminal has a first surface including a connection point with the first wiring and a second surface including a connection point with the second wiring. The connection point with the first wiring is located at a first height from a reference plane extending from the chip mount surface. The connection point with the second wiring is located at a second height different from the first height from the reference plane.
Public/Granted literature
- US20130264697A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-10-10
Information query
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