Invention Grant
US08896115B2 Semiconductor device and method of forming shielding layer around back surface and sides of semiconductor wafer containing IPD structure
有权
在包含IPD结构的半导体晶片的背面和侧面形成屏蔽层的半导体器件和方法
- Patent Title: Semiconductor device and method of forming shielding layer around back surface and sides of semiconductor wafer containing IPD structure
- Patent Title (中): 在包含IPD结构的半导体晶片的背面和侧面形成屏蔽层的半导体器件和方法
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Application No.: US13438463Application Date: 2012-04-03
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Publication No.: US08896115B2Publication Date: 2014-11-25
- Inventor: YongTaek Lee , HyunTai Kim , Gwang Kim , ByungHoon Ahn
- Applicant: YongTaek Lee , HyunTai Kim , Gwang Kim , ByungHoon Ahn
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC, Ltd.
- Current Assignee: STATS ChipPAC, Ltd.
- Current Assignee Address: SG Singapore
- Agency: Patent Law Group: Atkins and Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L23/04
- IPC: H01L23/04 ; H01L21/56 ; H01L23/552 ; H01L25/16 ; H01L23/31 ; H01L23/64

Abstract:
A semiconductor wafer has an insulating layer over a first surface of the substrate. An IPD structure is formed over the insulating layer. The IPD structure includes a MIM capacitor and inductor. A conductive via is formed through a portion of the IPD structure and partially through the substrate. The conductive via can be formed in first and second portions. The first portion is formed partially through the substrate and second portion is formed through a portion of the IPD structure. A first via is formed through a second surface of the substrate to the conductive via. A shielding layer is formed over the second surface of the substrate wafer. The shielding layer extends into the first via to the conductive via. The shielding layer is electrically connected through the conductive via to an external ground point. The semiconductor wafer is singulated through the conductive via.
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