Invention Grant
- Patent Title: Radiation-tolerant overcurrent detection
- Patent Title (中): 辐射耐受过电流检测
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Application No.: US13279049Application Date: 2011-10-21
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Publication No.: US08896323B2Publication Date: 2014-11-25
- Inventor: Charles Parkhurst , Mark Hamlyn
- Applicant: Charles Parkhurst , Mark Hamlyn
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Alan A. R. Cooper; Frederick J. Telecky, Jr.
- Main IPC: G01R31/02
- IPC: G01R31/02 ; H03K19/003 ; G01R19/165 ; G01R31/26

Abstract:
Systems and methods for radiation-tolerant overcurrent detection are disclosed. In some embodiments, an integrated circuit may include a plurality of overcurrent detectors, each of the plurality of overcurrent detectors configured to detect a candidate overcurrent event. The integrated circuit may also include a voting circuit coupled to the overcurrent detectors, the voting circuit configured to indicate an overcurrent in response to receiving a selected number of candidate overcurrent events from the overcurrent detectors. At least one of the overcurrent detectors may be subject to detecting the candidate overcurrent in error, at least in part, due to exposure to ionizing radiation.
Public/Granted literature
- US20130099796A1 Radiation-Tolerant Overcurrent Detection Public/Granted day:2013-04-25
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