Invention Grant
- Patent Title: Current mirror self-capacitance measurement
- Patent Title (中): 电流镜电容测量
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Application No.: US13445748Application Date: 2012-04-12
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Publication No.: US08896327B2Publication Date: 2014-11-25
- Inventor: Samuel Brunet , Luben Hristov Hristov , Trond Jarle Pedersen , Iqbal Sharif
- Applicant: Samuel Brunet , Luben Hristov Hristov , Trond Jarle Pedersen , Iqbal Sharif
- Applicant Address: US CA San Jose
- Assignee: Atmel Corporation
- Current Assignee: Atmel Corporation
- Current Assignee Address: US CA San Jose
- Agency: Baker Botts LLP
- Main IPC: G01R27/26
- IPC: G01R27/26

Abstract:
In one embodiment, a method includes applying a first current to a capacitance of a touch sensor. The application of the first current to the capacitance for a first amount of time modifies the voltage at the capacitance from the reference voltage level to a first pre-determined voltage level. The method also includes applying a second current to an integration capacitor. The second current is proportional to the first current. The application of the second current to the integration capacitor for the first amount of time modifies the voltage at the integration capacitor from the reference voltage level to a first charging voltage level. The method also includes determining whether a touch input to the touch sensor has occurred based on the first charging voltage level.
Public/Granted literature
- US08754659B2 Current mirror self-capacitance measurement Public/Granted day:2014-06-17
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