Invention Grant
- Patent Title: Magnetoresistance effect element and magnetic memory
- Patent Title (中): 磁阻效应元件和磁存储器
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Application No.: US13432626Application Date: 2012-03-28
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Publication No.: US08897060B2Publication Date: 2014-11-25
- Inventor: Masahiko Nakayama , Katsuya Nishiyama
- Applicant: Masahiko Nakayama , Katsuya Nishiyama
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L29/82 ; H01L27/22 ; H01L43/08

Abstract:
According to one embodiment, a magnetoresistance effect element includes first and second magnetic layers having an axis of easy magnetization in a direction perpendicular to a film surface, a first nonmagnetic layer formed between the first and second magnetic layers, a first interface magnetic layer formed between the first magnetic layer and the first nonmagnetic layer, and a second nonmagnetic layer formed in the first interface magnetic layer and having an amorphous structure. An electric current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer makes a magnetization direction in the first magnetic layer variable.
Public/Granted literature
- US20120243305A1 MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY Public/Granted day:2012-09-27
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