Invention Grant
- Patent Title: Etch failure prediction based on wafer resist top loss
- Patent Title (中): 基于晶圆抗蚀剂顶部损耗的蚀刻失效预测
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Application No.: US13835339Application Date: 2013-03-15
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Publication No.: US08898597B2Publication Date: 2014-11-25
- Inventor: Qing Yang , Shyue Fong Quek , Gek Soon Chua , Yee Mei Foong , Dong Qing Zhang , Yun Tang
- Applicant: Qing Yang , Shyue Fong Quek , Gek Soon Chua , Yee Mei Foong , Dong Qing Zhang , Yun Tang
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
An approach for methodology, and an associated apparatus, enabling a simulation process to check integrity of the design and predict a manufacturability of a resulting circuit that accounts for process latitude without a long turnaround time and/or a highly skilled engineer is disclosed. Embodiments include: determining first and second features of an IC design; determining a thickness of a resist layer of the IC design based on an aerial image of the IC design; determining a threshold value according to the thickness; and comparing the threshold value to a separation distance between the first and second features.
Public/Granted literature
- US20140282286A1 ETCH FAILURE PREDICTION BASED ON WAFER RESIST TOP LOSS Public/Granted day:2014-09-18
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