Invention Grant
- Patent Title: Polishing solution for CMP, and method for polishing substrate using the polishing solution for CMP
- Patent Title (中): CMP抛光液，CMP抛光液抛光基板方法
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Application No.: US12737650Application Date: 2009-07-23
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Publication No.: US08900473B2Publication Date: 2014-12-02
- Inventor: Hisataka Minami , Ryouta Saisyo , Hiroshi Ono
- Applicant: Hisataka Minami , Ryouta Saisyo , Hiroshi Ono
- Applicant Address: JP Tokyo
- Assignee: Hitachi Chemical Company, Ltd.
- Current Assignee: Hitachi Chemical Company, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JPP2008-202937 20080806; JPP2008-297285 20081120
- International Application: PCT/JP2009/063172 WO 20090723
- International Announcement: WO2010/016390 WO 20100211
- Main IPC: C03C15/00
- IPC: C03C15/00 ; C03C25/68 ; H01L21/302 ; H01L21/461 ; C09K3/14 ; B24B37/04 ; C09G1/02 ; H01L21/321 ; H01L23/00 ; H01L29/06
Abstract:
The CMP polishing liquid of the present invention contains 1,2,4-triazole, a phosphoric acid, an oxidant, and abrasive particles. The polishing method of the present invention is a substrate polishing method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, in which the substrate is a substrate having a palladium layer, and the CMP polishing liquid is a CMP polishing liquid containing 1,2,4-triazole, a phosphoric acid, an oxidant, and abrasive particles.
Public/Granted literature
- US20110177690A1 POLISHING SOLUTION FOR CMP, AND METHOD FOR POLISHING SUBSTRATE USING THE POLISHING SOLUTION FOR CMP Public/Granted day:2011-07-21
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