Invention Grant
US08900538B2 Doped, passivated graphene nanomesh, method of making the doped, passivated graphene nanomesh, and semiconductor device including the doped, passivated graphene nanomesh
有权
掺杂的，钝化的石墨烯纳米粒子，制备掺杂的钝化石墨烯纳米粒子的方法，以及包括掺杂的，钝化的石墨烯纳米粒子的半导体器件
- Patent Title: Doped, passivated graphene nanomesh, method of making the doped, passivated graphene nanomesh, and semiconductor device including the doped, passivated graphene nanomesh
- Patent Title (中): 掺杂的，钝化的石墨烯纳米粒子，制备掺杂的钝化石墨烯纳米粒子的方法，以及包括掺杂的，钝化的石墨烯纳米粒子的半导体器件
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Application No.: US13194976Application Date: 2011-07-31
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Publication No.: US08900538B2Publication Date: 2014-12-02
- Inventor: Ahmed Abou-Kandil , Ahmed Maarouf , Glenn J. Martyna , Hisham Mohamed , Dennis M. Newns
- Applicant: Ahmed Abou-Kandil , Ahmed Maarouf , Glenn J. Martyna , Hisham Mohamed , Dennis M. Newns
- Applicant Address: US NY Armonk EG Giza
- Assignee: International Business Machines Corporation,Egypt Nanotechnology Center
- Current Assignee: International Business Machines Corporation,Egypt Nanotechnology Center
- Current Assignee Address: US NY Armonk EG Giza
- Agency: McGinn IP Law Group, PLLC
- Agent Vazken Alexanian
- Main IPC: C01B31/00
- IPC: C01B31/00 ; C01B35/18 ; C01D15/00 ; H01L29/16 ; H01L29/78 ; C01B31/04
Abstract:
A method of making a semiconductor device, includes providing a graphene sheet, creating a plurality of nanoholes in the graphene sheet to form a graphene nanomesh, the graphene nanomesh including a plurality of carbon atoms which are formed adjacent to the plurality of nanoholes, passivating a dangling bond on the plurality of carbon atoms by bonding a passivating element to the plurality of carbon atoms, and doping the passivated graphene nanomesh by bonding a dopant to the passivating element.
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