Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12137328Application Date: 2008-06-11
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Publication No.: US08900715B2Publication Date: 2014-12-02
- Inventor: Horst Theuss
- Applicant: Horst Theuss
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: A61N5/00
- IPC: A61N5/00 ; G21G5/00 ; B32B9/04 ; B32B13/04 ; H01L21/02 ; H01L21/78 ; H01L21/268
Abstract:
A semiconductor device includes a wafer having a first surface opposite a second surface, and at least one laser irradiated region between the first and second surfaces. The laser irradiated region includes a laser-induced stress that is configured to minimize curvature of at least one of the first and second surfaces.
Public/Granted literature
- US20090309191A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-12-17
Information query
