Invention Grant
US08900930B2 Method to make RF-PCM switches and circuits with phase-change materials
有权
使用相变材料制造RF-PCM开关和电路的方法
- Patent Title: Method to make RF-PCM switches and circuits with phase-change materials
- Patent Title (中): 使用相变材料制造RF-PCM开关和电路的方法
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Application No.: US13737441Application Date: 2013-01-09
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Publication No.: US08900930B2Publication Date: 2014-12-02
- Inventor: Jeung-Sun Moon
- Applicant: HRL Laboratories, LLC
- Applicant Address: US CA Malibu
- Assignee: HRL Laboratories, LLC
- Current Assignee: HRL Laboratories, LLC
- Current Assignee Address: US CA Malibu
- Agency: Ladas & Parry
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L47/00 ; H01L27/24 ; H01L45/00

Abstract:
A radio frequency switch includes a first transmission line, a second transmission line, a first electrode electrically coupled to the first transmission line, a second electrode electrically coupled to the second transmission line, and a phase change material, the first transmission line coupled to a first area of the phase change material and the second transmission line coupled to a second area of the phase change material. When a direct current is sent from the first electrode to the second electrode through the phase change material, the phase change material changes state from a high resistance state to a low resistance state allowing transmission from the first transmission line to the second transmission line. The radio frequency switch is integrated on a substrate.
Public/Granted literature
- US20140191181A1 METHOD TO MAKE RF-PCM SWITCHES AND CIRCUITS WITH PHASE-CHANGE MATERIALS Public/Granted day:2014-07-10
Information query
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