Invention Grant
- Patent Title: Transistor with enhanced channel charge inducing material layer and threshold voltage control
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Application No.: US14165602Application Date: 2014-01-28
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Publication No.: US08900939B2Publication Date: 2014-12-02
- Inventor: Francis J. Kub , Travis Anderson , Karl D. Hobart , Michael A. Mastro , Charles R. Eddy, Jr.
- Applicant: Francis J. Kub , Travis Anderson , Karl D. Hobart , Michael A. Mastro , Charles R. Eddy, Jr.
- Applicant Address: US DC Washington
- Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Rebecca L. Forman
- Main IPC: H01L21/335
- IPC: H01L21/335 ; H01L29/66 ; H01L29/778 ; H01L29/08 ; H01L29/205 ; H01L29/423 ; H01L29/20 ; H01L29/40
Abstract:
High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.
Public/Granted literature
- US20140141580A1 TRANSISTOR WITH ENHANCED CHANNEL CHARGE INDUCING MATERIAL LAYER AND THRESHOLD VOLTAGE CONTROL Public/Granted day:2014-05-22
Information query
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