Invention Grant
- Patent Title: Method of forming a memory device
- Patent Title (中): 形成存储器件的方法
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Application No.: US13253512Application Date: 2011-10-05
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Publication No.: US08900945B2Publication Date: 2014-12-02
- Inventor: John Moore , Joseph F. Brooks
- Applicant: John Moore , Joseph F. Brooks
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.
Public/Granted literature
- US20120025379A1 FRONT-END PROCESSING OF NICKEL PLATED BOND PADS Public/Granted day:2012-02-02
Information query
IPC分类:
