Invention Grant
US08900955B2 Thin film transistor device with accurately aligned electrode patterns
有权
薄膜晶体管器件具有精确对准的电极图案
- Patent Title: Thin film transistor device with accurately aligned electrode patterns
- Patent Title (中): 薄膜晶体管器件具有精确对准的电极图案
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Application No.: US13621095Application Date: 2012-09-15
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Publication No.: US08900955B2Publication Date: 2014-12-02
- Inventor: Paul A. Cain , Yong-Young Noh , Henning Sirringhaus
- Applicant: Paul A. Cain , Yong-Young Noh , Henning Sirringhaus
- Applicant Address: GB GB
- Assignee: Cambridge Enterprise Limited,Plastic Logic Limited
- Current Assignee: Cambridge Enterprise Limited,Plastic Logic Limited
- Current Assignee Address: GB GB
- Agency: Schwegman Lundberg & Woessner, P.A.
- Priority: GB06062574 20060329; GB06062582 20060329; GB06067730 20060405; GB06243828 20061206; GB06243836 20061206
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L51/00 ; H01L51/10 ; H01L29/786 ; H01L51/05

Abstract:
An electronic device comprising an optically transparent substrate, a first electrode structure incorporating a channel, said channel being optically transparent and said electrode structure being optically opaque, at least one intermediate layer, and a photosensitive dielectric layer disposed above the at least one intermediate layer, the photosensitive dielectric layer incorporating a trench in a region essentially over said channel, the electronic device further comprising a further electrode, wherein the further electrode is located partially in the trench and partially beyond the trench such that portions of the further electrode that extend beyond the trench are separated from the at least one intermediate layer by the photosensitive dielectric layer.
Public/Granted literature
- US20130075734A1 THIN FILM TRANSISTOR DEVICE WITH ACCURATELY ALIGNED ELECTRODE PATTERNS Public/Granted day:2013-03-28
Information query
IPC分类: