Invention Grant
US08900960B2 Integrated circuit device with well controlled surface proximity and method of manufacturing same
有权
具有良好控制的表面接近的集成电路器件及其制造方法
- Patent Title: Integrated circuit device with well controlled surface proximity and method of manufacturing same
- Patent Title (中): 具有良好控制的表面接近的集成电路器件及其制造方法
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Application No.: US13961748Application Date: 2013-08-07
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Publication No.: US08900960B2Publication Date: 2014-12-02
- Inventor: Ming-Huan Tsai , Chun-Fai Cheng , Hui Ouyang , Yuan-Hung Chiu , Yen-Ming Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8238 ; H01L21/265 ; H01L29/78 ; H01L29/66
Abstract:
An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region and a lightly doped source and drain (LDD) region in a source and drain region of the device. The doped region is implanted with a dopant type opposite the LDD region.
Public/Granted literature
- US20130323891A1 Integrated Circuit Device with Well Controlled Surface Proximity and Method of Manufacturing Same Public/Granted day:2013-12-05
Information query
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