Invention Grant
US08900987B1 Method for removing bumps from incomplete and defective interposer dies for stacked silicon interconnect technology (SSIT) devices 有权
用于从层叠硅互连技术(SSIT)器件的不完全和有缺陷的插入器裸片去除凸块的方法

  • Patent Title: Method for removing bumps from incomplete and defective interposer dies for stacked silicon interconnect technology (SSIT) devices
  • Patent Title (中): 用于从层叠硅互连技术(SSIT)器件的不完全和有缺陷的插入器裸片去除凸块的方法
  • Application No.: US14046846
    Application Date: 2013-10-04
  • Publication No.: US08900987B1
    Publication Date: 2014-12-02
  • Inventor: Inderjit SinghRaghunandan ChawareGanesh HariharanGlenn O'Rourke
  • Applicant: Xilinx, Inc.
  • Applicant Address: US CA San Jose
  • Assignee: Xilinx, Inc.
  • Current Assignee: Xilinx, Inc.
  • Current Assignee Address: US CA San Jose
  • Agent Gerald Chan
  • Main IPC: H01L21/44
  • IPC: H01L21/44 H01L23/00
Method for removing bumps from incomplete and defective interposer dies for stacked silicon interconnect technology (SSIT) devices
Abstract:
A method for removing bumps from incomplete interposer die(s) and/or defective interposer die(s) of an interposer wafer is described. The method includes forming bumps on an interposer wafer; identifying at least one incomplete interposer die and/or at least one defective interposer die of the interposer wafer; and removing bumps from the at least one incomplete interposer die and/or the at least one defective interposer die of the interposer wafer.
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