Invention Grant
- Patent Title: Method for forming self-aligned airgap interconnect structures
- Patent Title (中): 用于形成自对准气隙互连结构的方法
-
Application No.: US13088083Application Date: 2011-04-15
-
Publication No.: US08900988B2Publication Date: 2014-12-02
- Inventor: Qinghuang Lin , Benjamin L. Fletcher , Cyril Cabral, Jr.
- Applicant: Qinghuang Lin , Benjamin L. Fletcher , Cyril Cabral, Jr.
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/44 ; H01L21/768 ; H01L21/311

Abstract:
Devices and methods for forming a self-aligned airgap interconnect structure includes etching a conductive layer to a substrate to form conductive structures with patterned gaps and filling the gaps with a sacrificial material. The sacrificial material is planarized to expose a top surface of the conductive layer. A permeable cap layer is deposited over the conductive structure and the sacrificial material. Self-aligned airgaps are formed by removing the sacrificial material through the permeable layer.
Public/Granted literature
- US20120261788A1 SELF-ALIGNED AIRGAP INTERCONNECT STRUCTURES AND METHODS OF FABRICATION Public/Granted day:2012-10-18
Information query
IPC分类: