Invention Grant
- Patent Title: Film forming method and storage medium
- Patent Title (中): 成膜方法和储存介质
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Application No.: US13402385Application Date: 2012-02-22
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Publication No.: US08900991B2Publication Date: 2014-12-02
- Inventor: Shuji Azumo , Yasuhiko Kojima
- Applicant: Shuji Azumo , Yasuhiko Kojima
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2011-038774 20110224
- Main IPC: H01L21/768
- IPC: H01L21/768 ; C23C16/16 ; C23C16/448 ; H01L23/532 ; H01L21/285
Abstract:
In a film forming method for forming a Co film on a substrate provided in a processing chamber, gaseous Co4(CO)12 as a single film forming material is supplied into the processing chamber. Then, the gaseous Co4(CO)12 is thermally decomposed on the substrate to form the Co film on the substrate.
Public/Granted literature
- US20120220121A1 FILM FORMING METHOD AND STORAGE MEDIUM Public/Granted day:2012-08-30
Information query
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