Invention Grant
- Patent Title: Substrate processing apparatus, method of processing substrate and method of manufacturing semiconductor device
- Patent Title (中): 基板处理装置，基板的处理方法及半导体装置的制造方法
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Application No.: US13813493Application Date: 2011-08-02
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Publication No.: US08901013B2Publication Date: 2014-12-02
- Inventor: Kazuhiro Yuasa , Masanao Fukuda , Takafumi Sasaki , Yasuhiro Megawa , Masayoshi Minami
- Applicant: Kazuhiro Yuasa , Masanao Fukuda , Takafumi Sasaki , Yasuhiro Megawa , Masayoshi Minami
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2010-176197 20100805
- International Application: PCT/JP2011/067667 WO 20110802
- International Announcement: WO2012/018008 WO 20120209
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/3105 ; H01L21/67
Abstract:
An oxygen-containing gas and a hydrogen-containing gas are supplied into a pre-reaction chamber heated to a second temperature and having the pressure set to less than an atmospheric pressure, and a reaction is induced between both gases in the pre-reaction chamber to generate reactive species, and the reactive species are supplied into the process chamber and exhausted therefrom, in which a substrate heated to the first temperature is housed and the pressure is set to less than the atmospheric pressure, and processing is applied to the substrate by the reactive species, with the second temperature set to be not less than the first temperature at this time.
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