Invention Grant
- Patent Title: Photovoltaic cell
- Patent Title (中): 光伏电池
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Application No.: US13121364Application Date: 2009-09-28
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Publication No.: US08901412B2Publication Date: 2014-12-02
- Inventor: John Roberts
- Applicant: John Roberts
- Applicant Address: US CA Milpitas
- Assignee: JDS Uniphase Corporation
- Current Assignee: JDS Uniphase Corporation
- Current Assignee Address: US CA Milpitas
- Agency: JDS Uniphase Corporation
- Priority: GB0817803.0 20080929
- International Application: PCT/GB2009/002313 WO 20090928
- International Announcement: WO2010/035014 WO 20100401
- Main IPC: H01L31/0735
- IPC: H01L31/0735 ; H01L31/06 ; H01L31/0304 ; H01L31/076 ; B82Y20/00 ; H01L31/0352
Abstract:
The disclosure relates to multiple quantum well (MQW) structures for intrinsic regions of monolithic photovoltaic junctions within solar cells which are substantially lattice matched to GaAs or Ge. The disclosed MQW structures incorporate quantum wells formed of quaternary InGaAsP, between barriers of InGaP.
Public/Granted literature
- US20110180129A1 PHOTOVOLTAIC CELL Public/Granted day:2011-07-28
Information query
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