Invention Grant
- Patent Title: Nano resonator and manufacturing method thereof
- Patent Title (中): 纳米谐振器及其制造方法
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Application No.: US13846685Application Date: 2013-03-18
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Publication No.: US08901538B2Publication Date: 2014-12-02
- Inventor: Jie Ai Yu , Duck Hwan Kim , In Sang Song , Jing Cui
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2012-0078313 20120718
- Main IPC: H01L31/0336
- IPC: H01L31/0336 ; H01L31/072 ; H01L29/745 ; H01L29/76 ; H01L21/336 ; B81C1/00 ; B81B3/00 ; H03H3/007 ; H03H9/24

Abstract:
A nano resonator includes a substrate, a first insulating layer disposed on the substrate, a first source disposed on the first insulating layer at a first position, a first drain disposed on the first insulating layer at a second position spaced apart from the first position so that the first drain faces the first source, a first nano-wire channel having a first end connected to the first source and a second end connected to the first drain, and having a doping type and a doping concentration that are identical to a doping type and a doping concentration of the first source and the first drain, and a second nano-wire channel disposed at a predetermined distance from the first nano-wire channel in a direction perpendicular to the substrate or a direction parallel to the substrate.
Public/Granted literature
- US20140021443A1 NANO RESONATOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-01-23
Information query
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