Invention Grant
- Patent Title: Stacked structure organic light-emitting transistors
- Patent Title (中): 堆叠结构有机发光晶体管
-
Application No.: US13830283Application Date: 2013-03-14
-
Publication No.: US08901547B2Publication Date: 2014-12-02
- Inventor: Antonio Facchetti
- Applicant: Polyera Corporation
- Applicant Address: US IL Skokie
- Assignee: Polyera Corporation
- Current Assignee: Polyera Corporation
- Current Assignee Address: US IL Skokie
- Agent Karen K. Chan
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L35/24 ; H01L51/00 ; H01L51/52

Abstract:
The present stacked structure organic light-emitting transistors include new arrangements of electrodes that can favor carrier recombination and exciton formation. More specifically, the stacked structure includes a substrate, a gate electrode, a channel layer having one or more organic sublayers, a dielectric layer positioned between the gate electrode and the channel layer, and a hole electrode and an electron electrode that are spaced apart from each other at a planar distance defining the length of a channel region in between. Each of the hole electrode and the electron electrode is positioned either within the channel layer or on top of a first side of the channel layer. Additionally, the hole electrode and the electron electrode are positioned away from a second side of the channel layer at different distances.
Public/Granted literature
- US20140054566A1 Novel Structures for Light-Emitting Transistors Public/Granted day:2014-02-27
Information query
IPC分类: