Invention Grant
- Patent Title: Light emitting diode structure and manufacturing method thereof
- Patent Title (中): 发光二极管结构及其制造方法
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Application No.: US13975387Application Date: 2013-08-26
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Publication No.: US08901551B2Publication Date: 2014-12-02
- Inventor: Kuan-Chieh Huang , Tung-Lin Chuang
- Applicant: Kuan-Chieh Huang , Tung-Lin Chuang
- Applicant Address: TW Tainan
- Assignee: Genesis Photonics Inc.
- Current Assignee: Genesis Photonics Inc.
- Current Assignee Address: TW Tainan
- Agency: Jianq Chyun IP Office
- Priority: TW102109549A 20130318
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L33/02 ; H01L51/50
Abstract:
A light emitting diode (LED) structure including a substrate, a polymer layer, and an epitaxy layer is provided. The polymer layer is disposed on the substrate, wherein the polymer layer has a chemical formula of: wherein M represents sodium, zinc, magnesium, or potassium. The epitaxy layer is disposed on the polymer layer. The epitaxy layer is bonded to the substrate via the polymer layer.
Public/Granted literature
- US20140264389A1 LIGHT EMITTING DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-09-18
Information query
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