Invention Grant
US08901562B2 Radiation imaging device, radiation imaging display system, and transistor
有权
辐射成像装置，放射成像显示系统和晶体管
- Patent Title: Radiation imaging device, radiation imaging display system, and transistor
- Patent Title (中): 辐射成像装置，放射成像显示系统和晶体管
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Application No.: US13334945Application Date: 2011-12-22
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Publication No.: US08901562B2Publication Date: 2014-12-02
- Inventor: Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku
- Applicant: Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Dentons US LLP
- Priority: JP2011-003742 20110112
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L27/12 ; H01L27/146 ; H01L29/786 ; H04N5/32
Abstract:
There are provided a transistor and a radiation imaging device in which a shift in a threshold voltage due to radiation exposure may be suppressed. The transistor includes a first gate electrode, a first gate insulator, a semiconductor layer, a second gate insulator, and a second gate electrode in this order on a substrate. Each of the first and second gate insulators includes one or a plurality of silicon compound films having oxygen, and a total sum of thicknesses of the silicon compound films is 65 nm or less.
Public/Granted literature
- US20120175618A1 RADIATION IMAGING DEVICE, RADIATION IMAGING DISPLAY SYSTEM, AND TRANSISTOR Public/Granted day:2012-07-12
Information query
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