Invention Grant
US08901603B2 Surge protection circuit for power MOSFETs used as active bypass diodes in photovoltaic solar power systems
有权
用作光伏太阳能发电系统中的有源旁路二极管的功率MOSFET的浪涌保护电路
- Patent Title: Surge protection circuit for power MOSFETs used as active bypass diodes in photovoltaic solar power systems
- Patent Title (中): 用作光伏太阳能发电系统中的有源旁路二极管的功率MOSFET的浪涌保护电路
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Application No.: US13851253Application Date: 2013-03-27
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Publication No.: US08901603B2Publication Date: 2014-12-02
- Inventor: Steven Andrew Robbins
- Applicant: Steven Andrew Robbins
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L27/02
Abstract:
A protection circuit for metal-oxide-semiconductor field-effect transistors (MOSFETs) that are used as active bypass diodes in photovoltaic solar power systems is disclosed. The protection circuit comprises, a detection circuit for detecting the start of a surge event, a switch disposed to connect the MOSFET's drain to it's gate in response to the start of the surge, a diode in series with the switch, a bistable circuit for keeping the switch closed during the surge, and a means of resetting the bistable circuit after the surge.
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