Invention Grant
US08901606B2 Pseudomorphic high electron mobility transistor (pHEMT) comprising low temperature buffer layer
有权
包含低温缓冲层的假型高电子迁移率晶体管（pHEMT）
- Patent Title: Pseudomorphic high electron mobility transistor (pHEMT) comprising low temperature buffer layer
- Patent Title (中): 包含低温缓冲层的假型高电子迁移率晶体管（pHEMT）
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Application No.: US13459864Application Date: 2012-04-30
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Publication No.: US08901606B2Publication Date: 2014-12-02
- Inventor: Nate Perkins , Jonathan Abrokwah , Hans G. Rohdin , Phil Marsh , John Stanback
- Applicant: Nate Perkins , Jonathan Abrokwah , Hans G. Rohdin , Phil Marsh , John Stanback
- Applicant Address: SG Singagpore
- Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee Address: SG Singagpore
- Main IPC: H01L29/24
- IPC: H01L29/24
Abstract:
A pseudomorphic high electron mobility transistor (pHEMT) comprises: a substrate comprising a Group III-V semiconductor material; buffer layer disposed over the substrate; and a channel layer disposed over the buffer layer. The buffer layer comprises microprecipitates of a Group V semiconductor element. A method of fabricating a pHEMT is also described.
Public/Granted literature
- US20130285119A1 PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (pHEMT) COMPRISING LOW TEMPERATURE BUFFER LAYER Public/Granted day:2013-10-31
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