Invention Grant
- Patent Title: Location-related adjustment of the operating temperature distribution or power distribution of a semiconductor power component, and component for carrying out said method
- Patent Title (中): 半导体功率部件的工作温度分布或功率分布的位置相关调整，以及用于实施所述方法的部件
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Application No.: US12990569Application Date: 2009-05-19
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Publication No.: US08901614B2Publication Date: 2014-12-02
- Inventor: Michael Stoisiek , Michael Gross
- Applicant: Michael Stoisiek , Michael Gross
- Applicant Address: DE Erfurt
- Assignee: X-Fab Semiconductor Foundries AG
- Current Assignee: X-Fab Semiconductor Foundries AG
- Current Assignee Address: DE Erfurt
- Agency: Duane Morris LLP
- Priority: DE102008023217 20080519
- International Application: PCT/EP2009/056080 WO 20090519
- International Announcement: WO2009/141350 WO 20091126
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L29/78 ; H01L21/67 ; H01L29/423 ; G05D23/19 ; H03K17/14 ; H03K17/08
Abstract:
Described is a method for adjusting an operating temperature of MOS power components composed of a plurality of identical individual cells and a component for carrying out the method. As a characteristic feature, the gate electrode network (4) of the active chip region is subdivided into several gate electrode network sectors (B1, B2, B3) which are electrically isolated from one another by means of isolating points and to each of which a different gate voltage is fed via corresponding contacts.
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