Invention Grant
US08901624B2 Schottky diodes having metal gate electrodes and methods of formation thereof
有权
具有金属栅电极的肖特基二极管及其形成方法
- Patent Title: Schottky diodes having metal gate electrodes and methods of formation thereof
- Patent Title (中): 具有金属栅电极的肖特基二极管及其形成方法
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Application No.: US13952434Application Date: 2013-07-26
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Publication No.: US08901624B2Publication Date: 2014-12-02
- Inventor: Philipp Riess , Domagoj Siprak
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L29/66 ; H01L27/095 ; H01L29/78 ; H01L27/06 ; H01L23/48 ; H01L29/06 ; H01L29/49 ; H01L29/51 ; H01L29/93 ; H01L21/8234
Abstract:
In one embodiment, the semiconductor device includes a first doped region disposed in a first region of a substrate. A first metal electrode having a first portion of a metal layer is disposed over and contacts the first doped region. A second doped region is disposed in a second region of the substrate. A dielectric layer is disposed on the second doped region. A second metal electrode having a second portion of the metal layer is disposed over the dielectric layer. The second metal electrode is capacitively coupled to the second doped region.
Public/Granted literature
- US20130307091A1 Schottky Diodes Having Metal Gate Electrodes and Methods of Formation Thereof Public/Granted day:2013-11-21
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