Invention Grant
- Patent Title: Monolithic bidirectional silicon carbide switching devices
- Patent Title (中): 单片双向碳化硅切换装置
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Application No.: US13559246Application Date: 2012-07-26
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Publication No.: US08901639B2Publication Date: 2014-12-02
- Inventor: Sei-Hyung Ryu
- Applicant: Sei-Hyung Ryu
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/78
Abstract:
A monolithic bidirectional switching device includes a drift layer having a first conductivity type and having an upper surface, and first and second vertical metal-oxide semiconductor (MOS) structures at the upper surface of the drift layer. The drift layer provides a common drain for the first and second vertical MOS structures. The first and second vertical MOS structures are protected by respective first and second edge termination structures at the upper surface of the drift layer. A monolithic bidirectional switching device according to further embodiments includes a vertical MOS structure at the upper surface of the drift layer, and a diode at the upper surface of the drift layer. The drift layer provides a drain for the vertical MOS structure and a cathode for the diode, and the vertical MOS structure and the diode are protected by respective first and second edge termination structures.
Public/Granted literature
- US20140027781A1 MONOLITHIC BIDIRECTIONAL SILICON CARBIDE SWITCHING DEVICES AND METHODS OF FORMING THE SAME Public/Granted day:2014-01-30
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