Invention Grant
- Patent Title: Semiconductor device, and manufacturing method for same
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13575959Application Date: 2011-02-01
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Publication No.: US08901650B2Publication Date: 2014-12-02
- Inventor: Naoki Makita , Hiroki Mori , Masaki Saitoh
- Applicant: Naoki Makita , Hiroki Mori , Masaki Saitoh
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Keating & Bennett, LLP
- Priority: JP2010-021616 20100202
- International Application: PCT/JP2011/052010 WO 20110201
- International Announcement: WO2011/096387 WO 20110811
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12
Abstract:
A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer (27), and the second thin film transistor has a second semiconductor layer (22). The first semiconductor layer (27) and the second semiconductor layer (22) are formed from one and the same film. Each of the first semiconductor layer (27) and the second semiconductor layer (22) has a slope portion (27e, 22e) positioned in the periphery and a main portion (27m, 22m) which is a portion excluding the slope portion. A p-type impurity is introduced into only a part of the slope portion (27e) of the first semiconductor layer with higher density than the main portion (27m) of the first semiconductor layer, the main portion (22m) of the second semiconductor layer, and the slope portion (22e) of the second semiconductor layer. Accordingly, a driving voltage of the semiconductor device provided with the n-type TFT and the p-type TFT can be reduced.
Public/Granted literature
- US20120305930A1 SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME Public/Granted day:2012-12-06
Information query
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