Invention Grant
- Patent Title: Power semiconductor device
- Patent Title (中): 功率半导体器件
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Application No.: US14074359Application Date: 2013-11-07
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Publication No.: US08901651B2Publication Date: 2014-12-02
- Inventor: Tae Wan Kim
- Applicant: KEC Corporation
- Applicant Address: KR Seoul
- Assignee: KEC Corporation
- Current Assignee: KEC Corporation
- Current Assignee Address: KR Seoul
- Priority: KR10-2012-0144751 20121212
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/06
Abstract:
A power semiconductor device is provided, which can prevent an electric field from concentrating on a diode region, and can improve a breakdown voltage by creating an impurity concentration gradient in the diode region to increase from a termination region to an active cell region to cause reverse current to be distributed to the active cell region.
Public/Granted literature
- US20140159152A1 POWER SEMICONDUCTOR DEVICE Public/Granted day:2014-06-12
Information query
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