Invention Grant
US08901664B2 High-K/metal gate CMOS finFET with improved pFET threshold voltage
有权
高K /金属栅极CMOS finFET，具有改善的pFET阈值电压
- Patent Title: High-K/metal gate CMOS finFET with improved pFET threshold voltage
- Patent Title (中): 高K /金属栅极CMOS finFET，具有改善的pFET阈值电压
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Application No.: US13151525Application Date: 2011-06-02
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Publication No.: US08901664B2Publication Date: 2014-12-02
- Inventor: Veeraraghavan S. Basker , Kangguo Cheng , Bruce B. Doris , Johnathan E. Faltermeier , Ali Khakifirooz
- Applicant: Veeraraghavan S. Basker , Kangguo Cheng , Bruce B. Doris , Johnathan E. Faltermeier , Ali Khakifirooz
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/84 ; H01L27/12 ; H01L29/10 ; H01L29/66
Abstract:
A device and method for fabrication of fin devices for an integrated circuit includes forming fin structures in a semiconductor material of a semiconductor device wherein the semiconductor material is exposed on sidewalls of the fin structures. A donor material is epitaxially deposited on the exposed sidewalls of the fin structures. A condensation process is applied to move the donor material through the sidewalls into the semiconductor material such that accommodation of the donor material causes a strain in the semiconductor material of the fin structures. The donor material is removed, and a field effect transistor is formed from the fin structure.
Public/Granted literature
- US20110227165A1 HIGH-K/METAL GATE CMOS FINFET WITH IMPROVED PFET THRESHOLD VOLTAGE Public/Granted day:2011-09-22
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