Invention Grant
US08901673B2 Semiconductor device having ring-shaped gate electrode, design apparatus, and program
有权
具有环形栅电极的半导体器件，设计装置和程序
- Patent Title: Semiconductor device having ring-shaped gate electrode, design apparatus, and program
- Patent Title (中): 具有环形栅电极的半导体器件，设计装置和程序
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Application No.: US14029428Application Date: 2013-09-17
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Publication No.: US08901673B2Publication Date: 2014-12-02
- Inventor: Takamitsu Onda
- Applicant: PS4 Luxco S.a.r.l.
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.a.r.l.
- Current Assignee: PS4 Luxco S.a.r.l.
- Current Assignee Address: LU Luxembourg
- Priority: JP2010-033740 20100218
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/78 ; H01L29/423 ; H01L27/02 ; H01L27/105 ; H01L27/108 ; H03K5/24
Abstract:
A semiconductor device includes: a substrate; a transistor that has a ring-shaped gate electrode formed on the substrate; a plurality of external dummy electrodes that are arranged outside the gate electrode and are formed in the same layer as the gate electrode; and at least one internal dummy electrode that is arranged inside the gate electrode and is formed in the same layer as the gate electrode.
Public/Granted literature
- US20140015022A1 SEMICONDUCTOR DEVICE HAVING RING-SHAPED GATE ELECTRODE, DESIGN APPARATUS, AND PROGRAM Public/Granted day:2014-01-16
Information query
IPC分类:
