Invention Grant
US08901706B2 Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches
有权
高稳定性高K四方HFO2层在高深宽比深沟内
- Patent Title: Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches
- Patent Title (中): 高稳定性高K四方HFO2层在高深宽比深沟内
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Application No.: US13345290Application Date: 2012-01-06
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Publication No.: US08901706B2Publication Date: 2014-12-02
- Inventor: Michael P. Chudzik , Bachir Dirahoui , Rishikesh Krishnan , Siddarth A. Krishnan , Oh-jung Kwon , Paul C. Parries , Hongwen Yan
- Applicant: Michael P. Chudzik , Bachir Dirahoui , Rishikesh Krishnan , Siddarth A. Krishnan , Oh-jung Kwon , Paul C. Parries , Hongwen Yan
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Joseph P. Abate, Esq.
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A trench structure that in one embodiment includes a trench present in a substrate, and a dielectric layer that is continuously present on the sidewalls and base of the trench. The dielectric layer has a dielectric constant that is greater than 30. The dielectric layer is composed of tetragonal phase hafnium oxide with silicon present in the grain boundaries of the tetragonal phase hafnium oxide in an amount ranging from 3 wt. % to 20 wt. %.
Public/Granted literature
- US20130175665A1 THERMALLY STABLE HIGH-K TETRAGONAL HFO2 LAYER WITHIN HIGH ASPECT RATIO DEEP TRENCHES Public/Granted day:2013-07-11
Information query
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