Invention Grant
- Patent Title: Metal gate electrode and field emission display having same
- Patent Title (中): 金属栅电极和场发射显示器具有相同的
-
Application No.: US13174881Application Date: 2011-07-01
-
Publication No.: US08901807B2Publication Date: 2014-12-02
- Inventor: Hai-Yan Hao , Shou-Shan Fan
- Applicant: Hai-Yan Hao , Shou-Shan Fan
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN201010264754 20100827
- Main IPC: H01J1/62
- IPC: H01J1/62 ; H01J29/46 ; H01J31/12

Abstract:
A metal gate electrode for a field emission device includes a plurality of metal strips. Some of the metal strips are arranged substantially along a first direction, and other metal strips are arranged substantially along a second direction substantially perpendicular to the first direction. The metal strips are connected to each other to define a plurality of rectangular apertures through which electrons can pass.
Public/Granted literature
- US20120049721A1 METAL GATE ELECTRODE AND FIELD EMISSION DISPLAY HAVING SAME Public/Granted day:2012-03-01
Information query