Invention Grant
- Patent Title: Light emitting device and manufacturing method thereof
- Patent Title (中): 发光元件及其制造方法
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Application No.: US13253099Application Date: 2011-10-05
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Publication No.: US08901809B2Publication Date: 2014-12-02
- Inventor: Masayuki Sakakura , Shuhei Takahashi , Kazuko Ikeda , Tomoya Futamura
- Applicant: Masayuki Sakakura , Shuhei Takahashi , Kazuko Ikeda , Tomoya Futamura
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2004-091710 20040326
- Main IPC: G09G3/30
- IPC: G09G3/30 ; H05B33/04 ; H01L27/32 ; H01L27/12

Abstract:
A light emitting device of the invention includes a thin film transistor, an insulating layer covering the thin film transistor, an electrode which is electrically connected to the thin film transistor through a contact hole formed on the insulating layer, and a light emitting element formed by interposing a light emitting layer between a first electrode which is electrically connected to the electrode and a second electrode. The light emitting device further includes a layer formed of a different material from that of the insulating layer only between the electrode and the first electrode over the insulating layer and the insulating layer.
Public/Granted literature
- US20120056214A1 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-03-08
Information query
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