Invention Grant
- Patent Title: Lattice structure for capacitance sensing electrodes
- Patent Title (中): 电容感应电极的晶格结构
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Application No.: US13198717Application Date: 2011-08-05
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Publication No.: US08901944B2Publication Date: 2014-12-02
- Inventor: Min Chin Chai , Patrick Prendergast , Tao Peng
- Applicant: Min Chin Chai , Patrick Prendergast , Tao Peng
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: G01R27/26
- IPC: G01R27/26 ; G06F3/041 ; G06F3/045 ; H03K17/96 ; G06F3/044

Abstract:
One embodiment of a capacitive sensor array may comprise a first plurality of sensor elements and a second sensor element comprising a main trace, where the main trace intersects each of the first plurality of sensor elements to form a plurality of intersections. A unit cell may be associated with each of the intersections, and each unit cell may designate a set of locations nearest to the corresponding intersection. A contiguous section of the main trace may cross at least one of the plurality of unit cells. Within each unit cell, the second sensor element may comprise at least one primary subtrace branching away from the main trace.
Public/Granted literature
- US20110316567A1 Lattice Structure for Capacitance Sensing Electrodes Public/Granted day:2011-12-29
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