Invention Grant
- Patent Title: Process and apparatus for measuring the crystal fraction of crystalline silicon casted mono wafers
- Patent Title (中): 用于测量晶体硅铸造单晶片的晶体分数的方法和装置
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Application No.: US13421194Application Date: 2012-03-15
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Publication No.: US08902428B2Publication Date: 2014-12-02
- Inventor: Asaf Schlezinger , Amir Al-Bayati
- Applicant: Asaf Schlezinger , Amir Al-Bayati
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: G01N21/55
- IPC: G01N21/55
Abstract:
Provided are methods and apparatus for determining the crystal fraction of a casted-mono silicon wafer. A light source is directed at the wafer and the transmission or reflection is measured by a detector. An image of the wafer is generated by a processor and the crystal fraction is calculated from the generated image. The crystal fraction is correlated to the efficiency of the solar cell produced, allowing for the rejection of inferior wafers prior to processing.
Public/Granted literature
- US20130242287A1 Process and Apparatus for Measuring the Crystal Fraction of Crystalline Silicon Casted Mono Wafers Public/Granted day:2013-09-19
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