A semiconductor device includes a memory cell. The memory cell includes: a magnetic recording layer formed of ferromagnetic material; first and second magnetization fixed layers coupled to the magnetic recording layer; a plurality of reference layers opposed to the magnetic recording layer; and a plurality of tunnel barrier films respectively inserted between the magnetic recording layer and the reference layers. The first magnetization fixed layer has a magnetization fixed in a first direction, and the second magnetization fixed layer has a magnetization fixed in a second direction opposite to first direction. The reference layers each have a magnetization fixed in the first direction or the second direction. The reference layers and the tunnel barrier layers are positioned between the first and second magnetization fixed layers.