Invention Grant
- Patent Title: Write scheme for charge trapping memory
- Patent Title (中): 电荷捕获存储器的写入方案
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Application No.: US14289230Application Date: 2014-05-28
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Publication No.: US08902647B1Publication Date: 2014-12-02
- Inventor: Deepak Raghu , Chris Avila , Gautam A. Dusija , Yingda Dong
- Applicant: SanDisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Davis Wright Tremaine LLP
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/34

Abstract:
In a charge trapping memory, data that would otherwise be likely to remain adjacent to unwritten word lines is written three times, along three immediately adjacent word lines. The middle copy is protected from charge migration on either side and is considered a safe copy for later reading. Dummy data may be programmed along a number of word lines to format a block for good data retention.
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