Invention Grant
US08902651B2 Nonvolatile memory device, programming method of nonvolatile memory device and memory system including nonvolatile memory device
有权
非易失性存储器件，非易失性存储器件的编程方法和包括非易失性存储器件的存储器系统
- Patent Title: Nonvolatile memory device, programming method of nonvolatile memory device and memory system including nonvolatile memory device
- Patent Title (中): 非易失性存储器件，非易失性存储器件的编程方法和包括非易失性存储器件的存储器系统
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Application No.: US13648290Application Date: 2012-10-10
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Publication No.: US08902651B2Publication Date: 2014-12-02
- Inventor: DongHun Kwak , Sang-Won Park , Won-Taeck Jung
- Applicant: DongHun Kwak , Sang-Won Park , Won-Taeck Jung
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2011-0104753 20111013
- Main IPC: G11C16/04
- IPC: G11C16/04 ; H01L27/115 ; G11C16/34 ; G11C16/10
Abstract:
Disclosed are a program method and a nonvolatile memory device. The method includes receiving program data to be programmed in memory cells; reading the memory cells to judge an erase state and at least one program state; performing a state read operation in which the at least one program state is read using a plurality of state read voltages; and programming the program data in the memory cells using a plurality of verification voltages having different levels according to a result of the state read operation. Also disclosed are methods using a plurality of verification voltages selected based on factors which may affect a threshold voltage shift or other characteristic representing the data of a memory cell after programming.
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