Invention Grant
US08902660B2 Semiconductor devices having wiring with contact pads and dummy lines
有权
具有接触焊盘和虚线的布线的半导体器件
- Patent Title: Semiconductor devices having wiring with contact pads and dummy lines
- Patent Title (中): 具有接触焊盘和虚线的布线的半导体器件
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Application No.: US14182329Application Date: 2014-02-18
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Publication No.: US08902660B2Publication Date: 2014-12-02
- Inventor: Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2007-0132606 20071217
- Main IPC: G11C16/04
- IPC: G11C16/04 ; H01L23/48 ; G11C5/06 ; H01L27/02 ; H01L27/115 ; H01L21/02 ; H01L21/033 ; H01L21/3213
Abstract:
A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction.
Public/Granted literature
- US20140159246A1 METHODS OF MANUFACTURING NAND FLASH MEMORY DEVICES Public/Granted day:2014-06-12
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