Invention Grant
- Patent Title: Method of testing a semiconductor memory device
- Patent Title (中): 测试半导体存储器件的方法
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Application No.: US13439271Application Date: 2012-04-04
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Publication No.: US08902673B2Publication Date: 2014-12-02
- Inventor: Hong-Beom Kim , Hyun-Soon Jang
- Applicant: Hong-Beom Kim , Hyun-Soon Jang
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F.Chau & Associates, LLC
- Priority: KR10-2011-0031208 20110405
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C29/02 ; G11C29/12 ; G11C29/48

Abstract:
A method of testing a semiconductor memory device includes writing first data to a memory cell array in the semiconductor memory device, loading second data from the memory cell array onto a plurality of data pads of the semiconductor memory device, rewriting the second data to the memory cell array, and outputting test result data through one or more test pads. The first data is received from an external device through the one or more test pads, which correspond to one or more of the plurality of data pads. The test result data is based on the rewritten data in the memory cell array.
Public/Granted literature
- US20120257461A1 METHOD OF TESTING A SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2012-10-11
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