Invention Grant
US08902681B2 Setting a reference voltage in a memory controller trained to a memory device
有权
将存储器控制器中的参考电压设置为训练到存储器件
- Patent Title: Setting a reference voltage in a memory controller trained to a memory device
- Patent Title (中): 将存储器控制器中的参考电压设置为训练到存储器件
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Application No.: US13472891Application Date: 2012-05-16
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Publication No.: US08902681B2Publication Date: 2014-12-02
- Inventor: Benjamin A. Fox , William P. Hovis , Thomas W. Liang , Paul W. Rudrud
- Applicant: Benjamin A. Fox , William P. Hovis , Thomas W. Liang , Paul W. Rudrud
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Toler Law Group
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C29/02 ; G06F1/32 ; G11C29/50
Abstract:
Systems and methods to set a voltage value associated with a memory controller coupled to a memory device are disclosed. A particular method includes comparing test data of a test path to functional data of a functional path. The functional data may be generated based on device data received at a memory controller from a memory device. The test data may be affected by a voltage value applied to a resistor arrangement in electronic communication with the test path. The voltage value may be applied to the resistor arrangement based on the comparison.
Public/Granted literature
- US20120224436A1 Setting a Reference Voltage in a Memory Controller Trained to a Memory Device Public/Granted day:2012-09-06
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