Invention Grant
US08902686B2 Memory device, operation method thereof, and memory system having the same 有权
存储器件,其操作方法和具有该存储器件的存储器系统

Memory device, operation method thereof, and memory system having the same
Abstract:
A method of repairing a word line of a memory device includes receiving a row address, comparing a received row address with a row address of a defective cell, enabling a normal word line and a redundant word line, which correspond to the row address, according to a result of the row address comparison, receiving a column address, comparing a received column address with a column address of the defective cell, and performing a memory access operation on one of the normal word line and the redundant word line according to a result of the column address comparison.
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