Invention Grant
US08902686B2 Memory device, operation method thereof, and memory system having the same
有权
存储器件,其操作方法和具有该存储器件的存储器系统
- Patent Title: Memory device, operation method thereof, and memory system having the same
- Patent Title (中): 存储器件,其操作方法和具有该存储器件的存储器系统
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Application No.: US13833195Application Date: 2013-03-15
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Publication No.: US08902686B2Publication Date: 2014-12-02
- Inventor: In Chul Jeong , Ki Heung Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2012-0063917 20120614
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C29/04 ; G11C29/00

Abstract:
A method of repairing a word line of a memory device includes receiving a row address, comparing a received row address with a row address of a defective cell, enabling a normal word line and a redundant word line, which correspond to the row address, according to a result of the row address comparison, receiving a column address, comparing a received column address with a column address of the defective cell, and performing a memory access operation on one of the normal word line and the redundant word line according to a result of the column address comparison.
Public/Granted literature
- US20130336076A1 MEMORY DEVICE, OPERATION METHOD THEREOF, AND MEMORY SYSTEM HAVING THE SAME Public/Granted day:2013-12-19
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